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  - patented trench schottky technology - excellent high temperature stability - low forward voltage - lower power loss/ high efficiency - high forward surge capability packing code with suffix "g" means green compound (halogen-free) terminal: matte tin plated leads, solderable per jesd22-b102 meet jesd 201 class 2 whisker test v rrm v dv/dt v/ s typ. max. typ. max typ. max. typ. max. i f = 5a 0.64 - 0.68 - 0.72 - 0.77 - i f = 10a 0.74 0.81 0.78 0.87 0.81 0.90 0.83 0.93 i f = 5a 0.55 - 0.56 - 0.58 - 0.62 - i f = 10a 0.63 0.70 0.63 0.69 0.66 0.75 0.68 0.78 t j = 25c - 200 - 250 - 100 - 100 a t j = 125c 1.510515315 - 15ma r jc c/w t j c t stg c document number: ds_d1411024 version: i14 10 peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load per diode polarity: as marked 10000 1500 200 mounting torque: 0.56 nm max. weight: 1.7 g (approximately) maximum average forward rectified current 120 20 features - compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec - halogen-free according to iec 61249-2-21 definition typical applications trench schottky barrier rectifier are designed for high frequency miniature switched mode power supplies such as adapters, lighting and on-board dc/dc converters. 100 ito-220ab parameter symbol tsf20h100c thru tsf20h200c taiwan semiconductor a i f(av) per device maximum repetitive peak reverse voltage trench schottky rectifier mechanical data 150 120 4.5 operating junction temperature range storage temperature range typical thermal resistance per diode note 1: pulse test with pulse width=300 s, 1% duty cycle 4.0 4.0 4.5 - 55 to +150 - 55 to +150 v v a i fsm maximum ratings and electrical characteristics (t a =25c unless otherwise noted) voltage rate of change (rated v r ) per diode instantaneous forward voltage per diode ( note1 ) t j = 25c v f t j = 125c v f instantaneous reverse current per diode at rated reverse voltage i r v ac isolation voltage from terminal to heatsink t = 1 min tsf20h 100c unit tsf20h 200c tsf20h 150c tsf20h 120c case: ito-220ab molding compound meets ul 94 v-0 flammability rating
document number: ds_d1411024 version: i14 (t a =25 o c unless otherwise noted) ordering information part no. note 1: "xxx" defines voltage from 100v (tsf20h100c) to 200v (tsf20h200c) example tsf20hxxxc (note 1) tsf20h120c c0g tsf20h120c g part no. tsf20h100c thru tsf20h200c taiwan semiconductor packing code suffix package 50 / tube description g packing code suffix packing code c0 packing code c0 ratings and characteristics curves ito-220ab packing preferred part no. green compound 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 fig. 2 typical forward characteristics t j =25 c t j =125 c t j =150 c t j =100 c tsf20h100c 0 5 10 15 20 25 30 0 25 50 75 100 125 150 fig. 1 forward current derating curve with heatsink 3in x 5in x 0.25in al-plate average forward current (a) instantaneous forward current (a) case temperature ( o c) forward voltage (v) 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 fig. 3 typical forward characteristics tsf20h120c t j =25 c t j =125 c t j =150 c t j =100 c forward voltage (v) instantaneous forward current (a) 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 fig. 4 typical forward characteristics instantaneous forward current (a) forward voltage (v) TSF20H150C t j =25 c t j =125 c t j =150 c t j =100 c
document number: ds_d1411024 version: i14 tsf20h100c thru tsf20h200c taiwan semiconductor 10 100 1000 10000 0.1 1 10 100 fig. 10 typical junction capacitance f=1.0mhz vslg=50mvp-p reverse voltage (v) capacitance (pf) tsf20h150 c tsf20h150 c tsf20h120 c tsf20h100 c 0.0001 0.001 0.01 0.1 1 10 100 10 20 30 40 50 60 70 80 90 100 fig. 6 typical reverse characteristics percent of rated peak reverse voltage.(%) instantaneous reverse current (ma) tsf20h100c t j =25 c t j =125 c t j =150 c t j =100 c 0.00001 0.0001 0.001 0.01 0.1 1 10 10 20 30 40 50 60 70 80 90 100 fig. 9 typical reverse characteristics percent of rated peak reverse voltage.(%) tsf20h200c instantaneous reverse current(ma) t j =25 c t j =125 c t j =150 c t j =100 c 0.0001 0.001 0.01 0.1 1 10 10 20 30 40 50 60 70 80 90 100 fig. 8 typical reverse characteristics percent of rated peak reverse voltage.(%) TSF20H150C instantaneous reverse current(ma) t j =25 c t j =125 c t j =150 c t j =100 c 0.0001 0.001 0.01 0.1 1 10 100 10 20 30 40 50 60 70 80 90 100 fig. 7 typical reverse characteristics instantaneous reverse current (ma) percent of rated peak reverse voltage.(%) tsf20h120c t j =25 c t j =125 c t j =150 c t j =100 c 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 fig. 5 typical forward characteristics instantaneous forward current(a) forward voltage (v) tsf20h200c t j =25 c t j =125 c t j =150 c t j =100 c
package outline dimensions min max min max a 4.30 4.70 0.169 0.185 b 2.50 3.16 0.098 0.124 c 2.30 2.96 0.091 0.117 d 0.46 0.76 0.018 0.030 e 6.30 6.90 0.248 0.272 f 9.60 10.30 0.378 0.406 g 3.00 3.40 0.118 0.134 h 0.95 1.45 0.037 0.057 i 0.50 0.90 0.020 0.035 j 2.40 3.20 0.094 0.126 k 14.80 15.50 0.583 0.610 l - 4.10 - 0.161 m 12.60 13.80 0.496 0.543 n - 1.80 - 0.071 o 2.41 2.67 0.095 0.105 p/n = specific device code g = green compound yww = date code f = factory code document number: ds_d1411024 version: i14 tsf20h100c thru tsf20h200c taiwan semiconductor dim. unit (mm) unit (inch) marking diagram ito-220ab
creat by art specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied,to any intellectual property rights is granted by this document. except as provided in tsc's terms and conditions of sale for such products, tsc assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify tsc for any damages resulting from such improper use or sale. document number: ds_d1411024 version: i14 tsf20h100c thru tsf20h200c notice taiwan semiconductor


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